 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Advance Product Information February 10, 2006 Ka-Band Power Amplifier Key Features * * * * * * * TGA4517 Frequency Range: 31 - 37 GHz 35 dBm Nominal Psat @ Mid-band 20 dB Nominal Gain @ Mid-band 12 dB Nominal Return Loss Bias 5-6 V, 2 A Quiescent 0.15 um 3MI pHEMT Technology Chip Dimensions 4.35 x 3.90 x 0.05 mm (0.171 x 0.154 x 0.002) in Point-to-Point Radio Military Radar Systems Ka-Band Sat-Com Primary Applications * * * Product Description The TriQuint TGA4517 is a compact High Power Amplifier MMIC for Ka-band applications. The part is designed using TriQuint's 0.15um gate power pHEMT process. The TGA4517 nominally provides 35dBm of Saturated Output Power, and 20dB small signal gain @ mid-band of 31 - 37GHz. The MMIC also provides 12dB Return Loss. The part is ideally suited for markets such as Point-to-Point Radio, Military Radar Systems, and Ka-Band Satellite Communications both commercial and military. The TGA4517 is 100% DC and RF tested onwafer to ensure performance compliance. Lead-Free & RoHS compliant. Psat (dBm) 25 20 15 10 5 0 -5 -10 -15 -20 -25 Measured Fixtured Data Bias Conditions: Vd = 6 V, Idq = 2 A S-Parameter (dB) GAIN ORL IRL 30 31 32 33 34 35 36 37 38 39 40 Frequency (GHz) 38 36 34 32 30 28 26 Bias Conditions: Vd = 6 V, Idq = 2 A, Duty = 20% @ Pin = 24 dBm 32 33 34 35 36 37 38 Frequency (GHz) Note: Devices is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information February 10, 2006 TGA4517 TABLE I ABSOLUTE MAXIMUM RATINGS 1/ SYMBOL Vd Vg Id Ig PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ 5/ PARAMETER Drain Voltage Gate Voltage Range Drain Current (Under RF Drive) Gate Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature VALUE 6.5 V -3 TO 0 V 4A 141 mA TBD 18.3 W 150 C 320 0C -65 to 150 0C 0 NOTES 2/ 2/ 3/ 3/ 2/ 4/ 5/ 6/ These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. Total current for the entire MMIC. When operated at this bias condition (with RF applied) at a base plate temperature of 70 0C, the median life is 1E+6 hrs. Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings apply to each individual FET. 6/ TABLE II DC PROBE TESTS (Ta = 25 0C, Nominal) SYMBOL V BVGD,Q1-Q2 V BVGD,Q15-Q30 V P,Q15-Q30 PARAMETER Breakdown Voltage Gate-Drain Breakdown Voltage Gate-Drain Pinch-Off Voltage MIN. -30 -30 -1.5 TYP. -14 -14 -1 MAX. -11 -11 -0.5 UNITS V V V Each FET Cell is 750um TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 2 Advance Product Information February 10, 2006 TGA4517 TABLE III ELECTRICAL CHARACTERISTICS (Ta = 25 0C, Nominal) PARAMETER Frequency Range Drain Voltage, Vd Drain Current (Quiescent), Idq Gate Voltage, Vg Small Signal Gain, S21 @ Mid-band Input Return Loss, S11 Output Return Loss, S22 Output Power, Psat TYPICAL 31 - 37 6 2 -0.5 20 14 12 35 UNITS GHz V A V dB dB dB dBm TABLE IV THERMAL INFORMATION PARAMETER TEST CONDITIONS Vd = 6 V Idq = 2 A Pdiss = 12 W TCH (OC) RTJC (qC/W) TM (HRS) RJC Thermal Resistance (channel to backside of carrier) 122.3 4.36 1.2E+7 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70oC baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 3 Advance Product Information February 10, 2006 TGA4517 Measured Data Bias Conditions: Vd =5-6 V, Idq = 2 A, Room Temp. 24 22 20 18 16 Gain (dB) 14 12 10 8 6 4 2 0 30 31 32 33 34 35 36 37 38 39 40 Frequency (GHz) Vd=5V Vd=6V Bias Conditions: Vd =5-6 V, Idq = 2 A, Duty = 20%, Room Temp. 38 37 36 35 34 Psat (dBm) 33 32 31 30 29 28 27 26 32 33 34 35 Frequency (GHz) 36 37 38 Vd=5V Vd=6V TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 4 Advance Product Information February 10, 2006 TGA4517 Measured Data Bias Conditions: Vd =5-6 V, Idq = 2 A, Room Temp. 0 Vd=5V Vd=6V -5 Input Return Loss (dB) -10 -15 -20 -25 30 31 32 33 34 35 36 37 38 39 40 Frequency (GHz) 0 Vd=5V Vd=6V -5 Output Return Loss (dB) -10 -15 -20 -25 30 31 32 33 34 35 36 37 38 39 40 Frequency (GHz) TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 5 Advance Product Information February 10, 2006 TGA4517 Measured Data Drain Current vs. Drain Voltage, Duty = 20%, Room Temp. 6.0 Pin = 24 dBm 5.5 5.0 4.5 4.0 3.5 Id (A) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 32 33 34 35 Frequency (GHz) 36 37 Vd=5V Vd=6V 38 38 36 34 Output Power (dBm) 32 30 28 26 24 22 7 8 9 10 11 12 13 Frequency = 35 GHz 8 7 6 5 4 3 2 Vd=5V Vd=6V 1 0 14 15 16 17 18 19 20 21 22 23 24 Input Power (dBm) Drain Current (A) TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 6 Advance Product Information February 10, 2006 TGA4517 Measured Data Bias Conditions: Vd =5-6 V, Idq = 2 A, CW Power @ Pin = 22dBm, Room Temp. 38 37 36 35 Psat (dBm) 34 33 32 31 30 29 28 32 33 34 35 Frequency (GHz) 36 37 38 Vd=5V Vd=6V TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 7 Advance Product Information February 10, 2006 TGA4517 Mechanical Drawing 0.005 0.606 0.873 1.188 1.735 1.934 2.134 (0.125) (0.024) (0.034) (0.047) (0.068)(0.076) (0.084) 2.860 (0.113) 3.821 4.226 (0.150) (0.166) 3.900 (0.154) 2 3 4 5 6 7 8 9 1.951 (0.077) 1 10 (1.950 (0.077) 18 0 17 16 15 14 13 12 11 0 0.606 0.873 1.188 1.735 1.934 2.134 (0.024) (0.034) (0.047) (0.068)(0.076)(0.084) 2.860 (0.113) 3.821 (0.150) 4.352 (0.171) Units: Millimeters (inches) Thickness: 0.050 (0.002) (reference only) Chip edge to bond pad dimensions are shown to center of bond pad Chip size tolerance: +/- 0.051 (0.002) RF Ground is backside of MMIC Bond pad # 1: Bond pad # 2, 18: Bond pad # 3, 17: Bond pad # 4, 16: Bond pad # 5, 15: Bond pad # 6, 14: Bond pad # 7, 13: Bond pad # 8, 12: Bond pad # 9, 11: Bond pad # 10: (RF In) 0.125 x 0.200 0.125 x 0.125 (Vg1) 0.125 x 0.125 (Vd1) (Vg2) 0.125 x 0.125 0.125 x 0.125 (Vd2) 0.125 x 0.125 (Vg3) 0.125 x 0.125 (Vg4) 0.125 x 0.125 (Vd3) 0.125 x 0.125 (Vd4) (RF Out) 0.125 x 0.200 (0.005 x 0.008) (0.005 x 0.005) (0.005 x 0.005) (0.005 x 0.005) (0.005 x 0.005) (0.005 x 0.005) (0.005 x 0.005) (0.005 x 0.005) (0.005 x 0.005) (0.005 x 0.008) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 8 Advance Product Information February 10, 2006 TGA4517 Chip Assembly Diagram Vd 0.01uF 1000pF 1000pF 0.01uF 0.01uF 1000pF 1000pF RF In RF Out 1000pF 0.01uF 1000pF 1000pF 0.01uF 0.01uF 100 Ohm 10uF . Vg Vd GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 9 Advance Product Information February 10, 2006 TGA4517 Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. 0 Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. 0 Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 10 |
Price & Availability of TGA4517
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |